Mastering thermal characterization for GaN HEMTs

GaN HEMTsin modern power electronics.

This white paper highlights the challenges and solutions in the thermal characterization of GaN HEMTs, a key technology for efficient and compact power electronics. Discover how Simcenter Micred offers innovative approaches for testing and reliability analysis to take full advantage of GaN technologies.

• Improved test methods for GaN HEMTs: Innovative approaches for precise thermal transient testing.

• Optimal heat dissipation: Determination of thermal impedance and optimization of thermal resistance.

• Innovative technologies: Adaptation of traditional characterization methods for wide-bandgap materials (such as GaN) to specific requirements.

• Greater reliability: findings on operational reliability under high-performance conditions.

• Practical test solutions: Taking advantage of Simcenter Micred for accurate measurements and analysis.